一种抗单粒子瞬态加固的压控延迟线设计

Radiation-Hardened by Design Techniques to Mitigate Single- Event Transients in Voltage-Controlled Delay Line

  • 摘要: 延迟锁相环中的压控延迟线是对单粒子事件(single event, SE)最敏感的子电路之一,其主要包括偏置电路和压控延时单元.利用双指数电流拟合3-D TCAD混合仿真中的单粒子瞬态(single-event transient, SET)电流,分析了压控延迟线对SE的敏感性.根据响应程度和电路结构的不同,对偏置电路进行了冗余加固;同时,对压控延时单元中提出了SET响应检测电路.在输入信号频率为1 GHz,电源电压1.2 V,入射粒子LET值为80 MeV·cm2/mg的条件下,Spice仿真表明:和未加固电路相比,偏置电压VbnVbp在受到粒子轰击后,翻转幅度分别下降了75%和60%,消除了输出时钟信号中的丢失脉冲;设计出的检测电路能够将各种情况下有可能出现的SET响应指示出来,提高了输出时钟信号的可靠性.

     

    Abstract: The voltage-controlled delay line (VCDL) is one of the most sensitive subcircuits to single event (SE) in delay-locked loops (DLLs),which consists of a bias circuit and voltage-controlled delay cells. The sensitivity of VCDL in a DLL to single-event transient (SET) was analyzed based on double exponential current source and 3-D TCAD mixed-mode simulation. According to the difference in the severity of SET response and circuit structure,the bias circuit was hardened by analog redundancy,while a SET detection circuit was proposed for voltage-controlled delay cells. Simulations,making under the condition of 80 MeV·cm2/mg linear energy transfer (LET) values,1.2 V supply voltage and 1 GHz input reference clock,show the perturbed magnitude of biasing voltages,Vbn and Vbp,can be significantly reduced by 75% and 60%,respectively,completely eliminating missing pulses of output signals compared with the unhardened one. The proposed detection circuit can indicate SET response in voltage-controlled delay cells under different circumstances,improving the reliability of output signals in the DLL.

     

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