CMOS/SOI工艺触发器单元的单粒子实验验证与分析

SEE Evaluation Method for DFF Cell Based CMOS/SOI Technology

摘要: 针对定制设计中的触发器单元，提出了一种双移位寄存器链单粒子实验验证方法，利用该方法对基于0.35μm CMOS/SOI工艺、普通结构设计的抗辐射触发器，分别在北京串列加速器核物理国家实验室和兰州重离子加速器国家实验室进行了单粒子实验.实验结果表明，该抗辐射触发器不仅对单粒子闩锁效应免疫，而且具有非常高的抗单粒子翻转的能力.

Abstract: A dual shift-register chain structure was proposed for D flip-flop (DFF) cell's single-event effect (SEE) evaluation. Based the structure, the SEE performance of radiation-hardened DFF cell with common structure and made of 0.35μm CMOS/SOI technology was evaluated in Beijing Accelerator Nuclear Physics National Laboratory and Lanzhou National Laboratory of Heavy Ion Accelerator. The experimental results show that the DFF cells can be immune from single-event latch-up (SEL) and have high quality for standing up to single-event upset (SEU).