SEE Evaluation Method for DFF Cell Based CMOS/SOI Technology

A dual shift-register chain structure was proposed for D flip-flop (DFF) cell's single-event effect (SEE) evaluation. Based the structure, the SEE performance of radiation-hardened DFF cell with common structure and made of 0.35μm CMOS/SOI technology was evaluated in Beijing Accelerator Nuclear Physics National Laboratory and Lanzhou National Laboratory of Heavy Ion Accelerator. The experimental results show that the DFF cells can be immune from single-event latch-up (SEL) and have high quality for standing up to single-event upset (SEU).