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YANG Gui-li, JIAO Qing-jie, JIN Zhao-xin, XU Xin-chun. Electrothermal energy conversion mechanism of micro-scale semiconductor bridge[J]. JOURNAL OF BEIJING INSTITUTE OF TECHNOLOGY, 2011, 20(1): 23-29.
Citation: YANG Gui-li, JIAO Qing-jie, JIN Zhao-xin, XU Xin-chun. Electrothermal energy conversion mechanism of micro-scale semiconductor bridge[J]. JOURNAL OF BEIJING INSTITUTE OF TECHNOLOGY, 2011, 20(1): 23-29.

Electrothermal energy conversion mechanism of micro-scale semiconductor bridge

  • The response characteristics of resistance is observed by the analysis of experimental data of micro-scale semiconductor bridge (MSCB) under different voltage inputs. Two critical voltages are found. One is called exploding voltage, above which the MSCB can be melted and vaporized without generating a plasma, and the other is called producing a plasma voltage, above which the MSCB is entirely vaporized, and then the current flows through the vapor producing the plasma. Based on the non-Fourier heat conduction theory, the electrothermal energy conversion model is established for the stage from heating to exploding, and then the correlation of MSCB and time is obtained by graphic calculation. Importantly, the critical exploding voltage and exploding time are also derivate. With the comparison between the analytical result from the theoretical model and that from experimental data, it has been demonstrated that the theoretical model is reasonable and feasible for designing the exploding voltage and exploding time.
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